Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | IDK09G65 |
|---|---|
| Capacitance @ Vr, F | 270pF @ 1V, 1MHz |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Reverse Recovery Time (trr) | 0 ns |
| Serie | CoolSiC™+ |
| Technologie | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 9 A |
| Current - Average Rectified (Io) | 9A |
| Current - Reverse Leakage @ Vr | 1.6 mA @ 650 V |
| Geschwindigkeit | No Recovery Time > 500mA (Io) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|