INSULATED GATE BIPOLAR TRANSISTO
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Konfiguration | Single Switch |
|---|---|
| IGBT Type | Trench |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 150 nF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Chassis Mount |
| NTC Thermistor | No |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 2.4kA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
|---|---|
| Current - Collector (Ic) (Max) | 3550 A |
| Current - Collector Cutoff (Max) | 5 mA |
| Power - Max | 13500 W |
| Package / Case | Module |
|---|---|
| Hersteller-Gehäuse | AG-IHMB190 |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
|---|