Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 18mOhm @ 12A, 10V |
|---|---|
| FET Feature | Temperature Sensing Diode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | TEMPFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 90µA |
| Drain-Source-Spannung | 55 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Max. Verlustleistung | 120W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
| Hersteller-Gehäuse | PG-TO263-5-2 |
| Betriebstemperatur | -40°C ~ 175°C (TJ) |
|---|