Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 18mOhm @ 47A, 10V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Serie | Automotive, AEC-Q101 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Drain-Source-Spannung | 50 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Max. Verlustleistung | 170W |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-218-3 |
| Hersteller-Gehäuse | PG-TO218-3-1 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|