Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V |
|---|---|
| FET Feature | Depletion Mode |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 7 V |
| Input Capacitance (Ciss) (Max) @ Vds | 68 pF @ 10 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Serie | SIPMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1.8V @ 50µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Max. Verlustleistung | 360mW (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | PG-SOT23 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|