Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 900mOhm @ 980mA, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 319 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | SIPMOS® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 380µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 980mA (Tc) |
| Max. Verlustleistung | 1.8W (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-261-4, TO-261AA |
| Hersteller-Gehäuse | PG-SOT223-4-21 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|