BSO615CT

Name: BSO615CT
Brand: Infineon Technologies

Analog & Leistungselektronik

MOSFET N/P-CH 60V 3.1A/2A 8DSO

Obsolet8-SOIC (0.154", 3.90mm Width)Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	110mOhm @ 3.1A, 10V
Basis-Teilenummer	BSO615
Konfiguration	N and P-Channel
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
Hersteller	Infineon Technologies
Montageart	Surface Mount
Product Status	Obsolete
Serie	SIPMOS®
Technologie	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2V @ 20µA

Drain-Source-Spannung	60V
Current - Continuous Drain (Id) @ 25°C	3.1A, 2A
Power - Max	2W

Betriebstemperatur	-55°C ~ 150°C (TJ)