Allgemein
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V |
|---|---|
| Basis-Teilenummer | BSO615 |
| Konfiguration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V, 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V, 460pF @ 25V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Serie | SIPMOS® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 20µA, 2V @ 450µA |