Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.4A, 2.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 2.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | OptiMOS™2 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 0.95V @ 3.7µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
| Max. Verlustleistung | 500mW (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Hersteller-Gehäuse | PG-SOT363-6-6 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|