Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 20mOhm @ 12.5A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 48.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2430 pF @ 15 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | OptiMOS® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±25V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Drain-Source-Spannung | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 12.5A (Tc) |
| Max. Verlustleistung | 2.5W (Ta), 63W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-PowerTDFN |
| Hersteller-Gehäuse | PG-TDSON-8-6 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|