Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 50A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 52.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 10 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | OptiMOS™2 |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 134A (Tc) |
| Max. Verlustleistung | 2.8W (Ta), 78W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 8-PowerTDFN |
| Hersteller-Gehäuse | PG-TDSON-8-1 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|