Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 28mOhm @ 30A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 75 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | OptiMOS™ |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 60µA |
| Drain-Source-Spannung | 150 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 30A (Tc) |
| Max. Verlustleistung | 2.8W (Ta), 57W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | DirectFET™ Isometric MX |
| Hersteller-Gehäuse | MG-WDSON-2-5 |
| Betriebstemperatur | -40°C~150°C(TJ) |
|---|