Allgemein
| Rds On (Max) @ Id, Vgs | 10mOhm @ 46A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |