Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1mOhm @ 100A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 315 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10250 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Obsolete |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Drain-Source-Spannung | 40 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Max. Verlustleistung | 294W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Hersteller-Gehäuse | PG-TO263-7-900 |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|