Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 106A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9575 pF @ 50 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Max. Verlustleistung | 375W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Hersteller-Gehäuse | PG-TO263-3 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|