Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 56mOhm @ 11A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Drain-Source-Spannung | 150 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 18A (Tc) |
| Max. Verlustleistung | 2.7W (Ta), 45W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | DirectFET™ Isometric M2 |
| Hersteller-Gehäuse | DirectFET™ Isometric M2 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|