Allgemein
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
|---|---|
| Konfiguration | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 25V |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Product Status | Last Time Buy |
| Serie | HEXFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |