Allgemein
| Rds On (Max) @ Id, Vgs | 38mOhm @ 27A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1738 pF @ 800 V |
| Hersteller | Infineon Technologies |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +23V, -5V |
| Vgs(th) (Max) @ Id | 5.1V @ 8.6mA |