Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | 2ED2110 |
|---|---|
| Channel Type | Independent |
| Driven Configuration | High-Side and Low-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| Eingangstyp | Non-Inverting |
| Hersteller | Infineon Technologies |
| Montageart | Surface Mount |
| Number of Drivers | 2 |
| Product Status | Active |
| Rise / Fall Time (Typ) | 25ns, 17ns |
| Current - Peak Output (Source, Sink) | 2.5A, 2.5A |
|---|---|
| High Side Voltage - Max (Bootstrap) | 650 V |
| Logic Voltage - VIL, VIH | 6V, 14V |
| Versorgungsspannung | 10V ~ 20V |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Hersteller-Gehäuse | 16-SOIC |
| Betriebstemperatur | -40°C ~ 125°C (TA) |
|---|