Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 200mOhm @ 2A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 25 V |
| Hersteller | Harris Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +10V, -5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Drain-Source-Spannung | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Max. Verlustleistung | 1.09W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Hersteller-Gehäuse | 4-DIP, Hexdip |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|