Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 70mOhm @ 20A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 552 nC @ 20 V |
| Hersteller | Harris Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Max. Verlustleistung | 125W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-254-3, TO-254AA |
| Hersteller-Gehäuse | TO-254AA |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|