IRFD123

Name: IRFD123
Brand: Harris Corporation

Analog & Leistungselektronik

MOSFET N-CH 100V 1.3A 4DIP

Obsolet4-DIP (0.300", 7.62mm)Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	270mOhm @ 780mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
Hersteller	Harris Corporation
Montageart	Through Hole
Product Status	Obsolete
Technologie	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 250µA

Drain-Source-Spannung	100 V
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)