Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 25 V |
| Hersteller | Harris Corporation |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Max. Verlustleistung | 1.3W (Ta) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Hersteller-Gehäuse | 4-DIP, Hexdip, HVMDIP |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|