Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 16mOhm @ 8A, 10V |
|---|---|
| Konfiguration | 2 P-Channel |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2510pF @ 15V |
| Hersteller | Good-Ark Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 30V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
| Power - Max | 8.9W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SOP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|