Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 33mOhm @ 4A, 4.5V |
|---|---|
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 15V |
| Hersteller | Good-Ark Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-Source-Spannung | 20V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Power - Max | 1.56W (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-WFDFN Exposed Pad |
| Hersteller-Gehäuse | 6-DFN (2x3) |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|