GT088N06T

Name: GT088N06T
Brand: Goford Semiconductor

Analog & Leistungselektronik

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@

AktivTO-220-3Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	9mOhm @ 14A, 10V
FET Feature	Standard
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1620 pF @ 30 V
Hersteller	Goford Semiconductor
Montageart	Through Hole
Product Status	Active
Serie	SGT
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 250µA

Drain-Source-Spannung	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Max. Verlustleistung	75W (Tc)

Betriebstemperatur	-55°C ~ 150°C (TJ)