GT040N04TI

Name: GT040N04TI
Brand: Goford Semiconductor

Analog & Leistungselektronik

N40V, 110A,RD<4M@10V,VTH1.0V~2.5

AktivTO-220-3Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	4mOhm @ 10A, 10V
FET Feature	Standard
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2303 pF @ 20 V
Hersteller	Goford Semiconductor
Montageart	Through Hole
Product Status	Active
Serie	SGT
Technologie	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

Drain-Source-Spannung	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Max. Verlustleistung	160W (Tc)

Betriebstemperatur	-55°C ~ 150°C (TJ)