Allgemein
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 50A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8336 pF @ 60 V |
| Hersteller | Goford Semiconductor |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Aktiv |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |