Allgemein
| Rds On (Max) @ Id, Vgs | 11mOhm @ 16A, 10V |
|---|---|
| Basis-Teilenummer | G33N |
| Konfiguration | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 837pF @ 15V |
| Hersteller | Goford Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |