Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 200mOhm @ 3A, 10V |
|---|---|
| FET Feature | Standard |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1653 pF @ 50 V |
| Hersteller | Goford Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Max. Verlustleistung | 3.1W (Tc) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Hersteller-Gehäuse | 8-SOP |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
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