Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 12A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 10 V |
| Hersteller | Goford Semiconductor |
| Montageart | Through Hole |
| Verpackung | Tube |
| Teilestatus | Aktiv |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Max. Verlustleistung | 2.5W (Tc) |
| Package / Case | TO-220-3 |
|---|---|
| Hersteller-Gehäuse | TO-220 |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
|---|