G06N06S2

Name: G06N06S2
Brand: Goford Semiconductor

Analog & Leistungselektronik

MOSFET 2N-CH 60V 6A 8SOP

Aktiv8-SOIC (0.154", 3.90mm Width)Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	25mOhm @ 6A, 10V
Konfiguration	2 N-Channel
FET Feature	Standard
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1600pF @ 30V
Hersteller	Goford Semiconductor
Montageart	Surface Mount
Product Status	Active
Technologie	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4V @ 250µA

Drain-Source-Spannung	60V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Power - Max	2.1W (Tc)

Betriebstemperatur	-55°C ~ 150°C (TJ)