Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 27mOhm @ 2.3A, 4.5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 10 V |
| Hersteller | Goford Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±12V |
| Vgs(th) (Max) @ Id | 0.9V @ 250µA |
| Drain-Source-Spannung | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Max. Verlustleistung | 1.25W (Tc) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Hersteller-Gehäuse | SOT-23-3 |
| Betriebstemperatur | 150°C(TJ) |
|---|