Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 24mOhm @ 60A, 15V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 219 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5873 pF @ 800 V |
| Hersteller | GeneSiC Semiconductor |
| Montageart | Chassis Mount |
| Product Status | Active |
| Serie | G3R™ |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -10V |
| Vgs(th) (Max) @ Id | 2.69V @ 15mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Max. Verlustleistung | 365W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | SOT-227-4, miniBLOC |
| Hersteller-Gehäuse | SOT-227 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|