G3R12MT12K

Name: G3R12MT12K
Brand: GeneSiC Semiconductor

Analog & Leistungselektronik

1200V 12M TO-247-4 G3R SIC MOSFE

AktivTO-247-4Analog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	13mOhm @ 100A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	9335 pF @ 800 V
Hersteller	GeneSiC Semiconductor
Montageart	Through Hole
Product Status	Active
Technologie	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	2.7V @ 50mA

Drain-Source-Spannung	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	157A (Tc)
Max. Verlustleistung	567W (Tc)

Betriebstemperatur	-55°C~175°C(TJ)