Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 156mOhm @ 20A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3706 pF @ 1000 V |
| Hersteller | GeneSiC Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | G2R™ |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Drain-Source-Spannung | 3300 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 35A |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Hersteller-Gehäuse | TO-263-7 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|