Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 238 pF @ 1000 V |
| Hersteller | GeneSiC Semiconductor |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | G2R™ |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Vgs(th) (Max) @ Id | 3.5V @ 2mA |
| Drain-Source-Spannung | 3300 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Max. Verlustleistung | 74W (Tc) |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Hersteller-Gehäuse | TO-263-7 |
| Betriebstemperatur | -55°C~175°C(TJ) |
|---|