Allgemein
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
|---|---|
| Basis-Teilenummer | GE12160 |
| Konfiguration | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
| Hersteller | GE Aerospace |
| Montageart | Chassis Mount |
| Product Status | Active |
| Serie | SiC Power |
| Technologie | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |