Allgemein
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V |
|---|---|
| Basis-Teilenummer | GE12050 |
| Konfiguration | 6 N-Channel (3-Phase Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 29300pF @ 600V |
| Hersteller | GE Aerospace |
| Montageart | Chassis Mount |
| Product Status | Active |
| Serie | SiC Power |
| Technologie | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |