Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| FET Type | N-Channel |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 8.25 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 236 pF @ 400 V |
| Hersteller | GaNPower |
| Montageart | Surface Mount |
| Product Status | Active |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | +7.5V, -12V |
| Vgs(th) (Max) @ Id | 1.4V @ 3.5mA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | Die |
| Hersteller-Gehäuse | Die |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|