Allgemein
| Capacitance @ Vr, F | 380pF @ 4V, 1MHz |
|---|---|
| Hersteller | Fairchild Semiconductor |
| Montageart | Through Hole |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Technologie | Schottky |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 380pF @ 4V, 1MHz |
|---|---|
| Hersteller | Fairchild Semiconductor |
| Montageart | Through Hole |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Technologie | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 850 mV @ 5 A |
| Current - Average Rectified (Io) | 5A |
| Current - Reverse Leakage @ Vr | 500 µA @ 80 V |
| Geschwindigkeit | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | DO-201AD, Axial |
|---|---|
| Hersteller-Gehäuse | DO-201AD |
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|