Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 620mOhm @ 3A, 10V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
| Hersteller | Fairchild Semiconductor |
| Montageart | Through Hole |
| Product Status | Active |
| Serie | QFET® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Drain-Source-Spannung | 250 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Max. Verlustleistung | 50W (Tc) |
| Gehäuse | Bulk |
|---|---|
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Hersteller-Gehäuse | TO-220F-3 (Y-Forming) |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|