Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Gate Charge | 65 nC |
|---|---|
| IGBT Type | Trench |
| Eingangstyp | Standard |
| Hersteller | Fairchild Semiconductor |
| Montageart | Through Hole |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 22 ns |
| Td (on/off) @ 25°C | 22ns/130ns |
| Test Condition | 200V, 20A, 20Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 10A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
|---|---|
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 44.6 W |
| Gehäuse | Tube |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Hersteller-Gehäuse | TO-220F-3 |
| Betriebstemperatur | -55°C~150°C(TJ) |
|---|