INSULATED GATE BIPOLAR TRANSISTO
Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Basis-Teilenummer | FGA25S125 |
|---|---|
| Gate Charge | 204 nC |
| IGBT Type | Trench Field Stop |
| Eingangstyp | Standard |
| Hersteller | Fairchild Semiconductor |
| Montageart | Through Hole |
| Verpackung | Bulk |
| Teilestatus | Aktiv |
| Switching Energy | 1.09mJ (on), 580µJ (off) |
| Td (on/off) @ 25°C | 24ns/502ns |
| Test Condition | 600V, 25A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 25A |
| Voltage - Collector Emitter Breakdown (Max) | 1250 V |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 250 W |
| Package / Case | TO-3P-3, SC-65-3 |
|---|---|
| Hersteller-Gehäuse | TO-3PN |
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
|---|