FBG10N05AC

Name: FBG10N05AC
Brand: EPC Space, LLC

Analog & Leistungselektronik

GAN FET HEMT 100V5A COTS 4FSMD-A

Aktiv4-SMD, No LeadAnalog & Leistungselektronik

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.

Rds On (Max) @ Id, Vgs	44mOhm @ 5A, 5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	233 pF @ 50 V
Hersteller	EPC Space, LLC
Montageart	Surface Mount
Product Status	Active
Technologie	GaNFET (Gallium Nitride)
Vgs (Max)	+6V, -4V
Vgs(th) (Max) @ Id	2.5V @ 1.2mA

Drain-Source-Spannung	100 V
Drive Voltage (Max Rds On, Min Rds On)	5V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)

Betriebstemperatur	-55°C~150°C(TJ)