Allgemein
| Rds On (Max) @ Id, Vgs | 28mOhm @ 18A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 525 pF @ 100 V |
| Hersteller | EPC Space, LLC |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | e-GaN® |
| Technologie | MOSFET (Metal Oxide) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |