Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 25A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2366 pF @ 50 V |
| Hersteller | EPC |
| Montageart | Surface Mount |
| Product Status | Active |
| Serie | eGaN® |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Drain-Source-Spannung | 100 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta) |
| Gehäuse | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 7-PowerWQFN |
| Hersteller-Gehäuse | 7-QFN (3x5) |
| Betriebstemperatur | -40°C ~ 150°C (TJ) |
|---|