Allgemein
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1140 pF @ 100 V |
| Hersteller | EPC |
| Montageart | Surface Mount |
| Product Status | Not For New Designs |
| Serie | eGaN® |
| Technologie | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |