Allgemein
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
|---|---|
| Hersteller | EIC SEMICONDUCTOR INC. |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 2 µs |
| Technologie | Standard |

Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Capacitance @ Vr, F | 30pF @ 4V, 1MHz |
|---|---|
| Hersteller | EIC SEMICONDUCTOR INC. |
| Montageart | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 2 µs |
| Technologie | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1300 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 2 µA @ 1300 V |
| Geschwindigkeit | Standard Recovery >500ns, > 200mA (Io) |
| Gehäuse | Tape & Reel (TR) |
|---|---|
| Package / Case | DO-214AC, SMA |
| Hersteller-Gehäuse | SMA (DO-214AC) |
| Operating Temperature - Junction | -65°C ~ 175°C |
|---|