Strukturierte elektrische, mechanische und umweltbezogene Parameter aus importierten Produktattributen.
| Rds On (Max) @ Id, Vgs | 23mOhm @ 75A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6150 pF @ 1000 V |
| Hersteller | Diotec Semiconductor |
| Montageart | Through Hole |
| Product Status | Active |
| Technologie | SiCFET (Silicon Carbide) |
| Vgs(th) (Max) @ Id | 2.9V @ 250µA |
| Drain-Source-Spannung | 1200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 125A (Tc) |
| Max. Verlustleistung | 600W (Tc) |
| Gehäuse | Tube |
|---|---|
| Hersteller-Gehäuse | TO-247 |
| Grade | Automotive |
|---|---|
| Betriebstemperatur | -55°C ~ 175°C (TJ) |
| Qualification | AEC-Q101 |